ABSTRACT
The pseudo-binary alloy of indium (x)gallium(1−x)nitride has a compositionally dependent bandgap ranging from 0.65 to 3.42 eV, making it desirable for light emitting diodes and solar cell devices. Through modeling and film growth, the authors investigate the use of InxGa1−xN as an active layer in an induced junction. In an induced junction, electrostatics are used to create strong band bending at the surface of a doped material and invert the bands. The authors report modeling results, as well as preliminary film quality experiments for an induced junction in InGaN by space charge effects of neighboring materials, piezoelectric effects, and spontaneous polarization.
ACKNOWLEDGMENTS
This material was based upon work primarily supported by the Engineering Research Center Program of the National Science Foundation and the Office of Energy Efficiency and Renewable Energy of the Department of Energy under NSF Cooperative Agreement No. EEC-1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of the National Science Foundation or Department of Energy.
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