No Access Submitted: 18 September 1987 Accepted: 07 December 1987 Published Online: 04 June 1998
Journal of Vacuum Science & Technology A 6, 1950 (1988);
A structure of the type CaF2/CuCl/CaF2, in which the confined layer is 150 Å thick, has been grown on a Si(111) surface by molecular beam epitaxy in ultrahigh vacuum. The optical properties of the CuCl film have been characterized by low‐temperature photoluminescence as a function of excitation density. Striking differences in the excitonic emissions are observed between the quantum well structure and a bulk single crystal of CuCl, and are discussed in terms of film purity and thickness.
  1. © 1988 American Vacuum Society.