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No Access Submitted: 27 January 1983 Accepted: 11 April 1983 Published Online: 04 June 1998

  • A Monte Carlo study of Si(111) surface oxidation

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 1, 767 (1983); https://doi.org/10.1116/1.582689
S. E. Goodnick, W. Porod, R. O. Grondin, S. M. Goodnick, C. W. Wilmsen, and D. K. Ferry
more...View Affiliations
  • Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado 80523
View Contributors
  • S. E. Goodnick
  • W. Porod
  • R. O. Grondin
  • S. M. Goodnick
  • C. W. Wilmsen
  • D. K. Ferry
ABSTRACT
A theoretical study of the initial oxidation stages of Si(111) surfaces is undertaken. A Monte Carlo simulation is used to study the individual surface processes that have been suggested in the literature. The relative importance of these mechanisms for the chemical composition of the oxide layer as well as for the initial stages of the formation of SiOx is investigated.
  1. © 1983 American Vacuum Society.

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